Mobile electronic devices, Artificial Intelligence, Big Data, Cloud Computing and many other technological developments are changing our lives and society rapidly. However, they are also posing a huge challenge to the current memory and processing technologies – the drastically increased burden on data storage and processing. Massive efforts have been devoted to the development of new electronic and memory materials for next-generation non-volatile memories, memristor and neuromorphic computing devices. The latter mark a fundamental shift from the current von Neumann computing architecture, and are expected to lead to a dramatic increase in the computing efficiency, together with a further reduction in the size of the devices.
Both Germany and China put a strong emphasis on the development of electronic materials and memory devices, and have invested several hundred million Euros and several billion Chinese Yuan in this area. Investigations on phase-change materials, resistive switching oxides and magnetic resistive spintronic materials are very active in both countries. Both the 1st and 2nd Sino-German symposium on electronic and memory materials are fully sponsored by Chinesisch-Deutsche Zentrum für Wissenschaftsförderung (CDZ), under GZ1243 and GZ1478, respectively.
The 1st Sino-German symposium on electronic and memory materials Link