2018年7月9日

Program

The 2nd Sino-German Symposium on Electronic and Memory Materials

Room 101, Science Hall, Xi’an Jiaotong University, Xi’an, Shaanxi, P.R.China 710049

 

Sep 4th 2018 Arrival and reception

Sep 5th 2018 Scientific presentations and discussions

Time

Title

Speaker

8:30-9:00 Opening remark Mr. Changzhong He

Prof. Matthias Wuttig

Prof. Fei Ma

Session: Neuromorphic Computing

Chair: Prof. Wei Zhang

9:00-9:30 Memristive reconfigurable logic for in-memory computing Prof. Xiang-Shui Miao

Huazhong University of Science and Technology

9:30-10:00 Brain inspired computing and system Prof. Lu-Ping Shi

Tsinghua University

10:00-10:30

Group Photo, Coffee Break

Session: Spintronics

Chair: Prof. Matthias Wuttig

10:30-11:00 Towards the local measurement of charge density distributions in nanoscale materials in the transmission electron microscope Prof. Rafal Dunin-Burkowski

Reserch Centre Jülich

11:00-11:30 Magnon Valve Prof. Xiu-Feng Han

Institute of Physics, Chinese Academic of Science

11:30-12:00 Interfacial Magnetism and Its Application to STT-MRAM Prof. Tai Min

Xi’an Jiaotong University

12:00-14:00

Lunch

Session: Phase-Change Materials I

Chair: Prof. Zhimei Sun

14:00-14:30 Phase-Change Chalcogenides: Synthesis, Structure, Chemical Bonding Prof. Richard Dronskowski
RWTH Aachen University
14:30-15:00 Phase Change Materials by Design: Taming Bond No. 6 Prof. Matthias Wuttig
RWTH Aachen University
15:00-15:30 Nanoscale phenomena in GeSbTe-based thin films studied by advanced electron microscopy Dr. Andriy Lotnyk

Leibniz Institute of Surface Engineering

15:30-16:00

Coffee Break

Session: Materials by Design

Chair: Prof. Riccardo Mazzarello

16:00-16:30 Accelerating Phase-Change Materials Design by Integrating High-Throughput Ab Initio Calculations with Artificial Intelligence Prof. Zhi-Mei Sun

Beihang University

16:30-17:00 Machine-learning interatomic potentials as new tools for materials science Dr. Volker Deringer

University of Cambridge

17:00-17:30 Designing crystallization in phase-change materials for non-volatile memory and neuromorphic computing Prof. Wei Zhang

Xi’an Jiaotong University

17:30

Banquet

Sep 6th 2018 Scientific presentations and discussions

Session: Resistive Switching Phenomenon I

Chair: Prof. Chunlin Jia

8:30-9:00 Materials science approach towards artificial intelligence? Prof. Xin Guo

Huazhong University of Science and Technology

9:00-9:30 Uncovering switching and failure mechanism in memristive devices by operando spectromicroscopy Prof. Regina Dittmann

Reserch Centre Jülich

9:30-10:00 Resistive switching and magnetic properties of Au- and Ag-doped spinel ferrite thin films Prof. Ding-Hua Bao

Sun Yat-Sen University

10:00-10:30

Coffee Break

Session: Ferroelectrics and Thermoelectrics

Chair: Prof. Xin Guo

10:30-11:00 Engineering lattice defects in oxide films Prof. Chunlin Jia

Xi’an Jiaotong University

11:00-11:30 Multiscale contributions on the electromechanical responses of ferroelectric perovskites Prof. Nan Zhang

Xi’an Jiaotong University

11:30-12:00 Thermoelectric Performance of Crystalline IV-VI Compounds: A Chemical-Bonding Perspective Matteo Cagnoni

RWTH Aachen University

12:00-14:00

Lunch

Session: 2D Materials

Chair: Prof. Richard Dronskowski

14:00-14:30 Rubust memristors based on layered 2D materials Prof. Feng Miao

Nanjing University

14:30-15:00 Atomic Layer Deposition of 2D Materials and Devices Prof. Qingqing Sun

Fudan University

15:00-15:30 Quantum-Confined Electronic States Arising from the MoS2-WSe2 Moiré Pattern Prof. Yi Pan

Xi’an Jiaotong University

15:30-16:00

Coffee Break

Session: Phase-Change Materials II

Chair: Prof. Feng Miao

16:00-16:30 Sb-based phase change materials for durable memory devices Prof. Ming Xu

Huazhong University of Science and Technology

16:30-17:00 Phase change materials for high-speed working memory application Prof. Feng Rao

Shenzhen University

17:00-17:30 Understanding Metal-Insulator-Transition Mechanism for GeSbTe Superlattice Prof. Xian-Bin Li

Jilin University

17:30-20:00

Dinner

Sep 7th 2018 Scientific presentations and discussions

Session: Phase-Change Materials III

Chair: Prof. Qi Liu

8:30-9:00 Phase-Change Memory: from fundamental research to industrial development Prof. Zhi-Tang Song

Shanghai Institute of Microsystem and Information Technology

9:00-9:30 Monatomic phase-change memory Prof. Riccardo Mazzarello

RWTH Aachen University

9:30-10:00 On handling strain engineering in van der Waals bonded materials Dr. Raffaella Calarco

Paul-Drude-Institute for Solid State Electronics

10:00-10:30

Coffee Break

Session: Resistive Switching Phenomenon II

Chair: Prof. Ming Xu

10:30-11:00 Modulation of Cation Migration in Conductive-Bridge Resistive Switching Memory Prof. Qi Liu

Institute of Microelectronics, Chinese Academy of Sciences

11:00-11:30 Synaptic transistor based on layered molybdnium oxide Prof. Da-Shan Shang

Institute of Physics, Chinese Academic of Science

11:30-12:00 Quantitative Atomic-Scale Imaging of Lattice Defects in Electronic Materials Dr. Hongchu Du

Reserch Centre Jülich

12:00-14:00

Lunch

Session: Phase-Change Materials IV

Chair: Prof. Feng Rao

14:00-14:30 How ultrafast X-ray diffraction reveals a correlation between the structure and crystal growth velocity of supercooled phase-change materials Dr. Peter Zalden

University of Hamburg

14:30-15:00 Fast-crystallization-rate window in phase-change alloys Dr. Jiri Orava

Leibniz Institute for Solid state and Materials Research Dresden

15:00-15:30 All-optical processing using phase-change nanophotonics Dr. Francesco Lenzini

University of Münster

15:30-16:00 Distinctive bond breaking in crystalline phase-change materials and beyond Dr. Stefan Meier

RWTH Aachen University

16:00-16:30 Closing Remark Prof. Matthias Wuttig

Prof. Chunlin Jia

Prof. Wei Zhang

17:30

Dinner

Sep 8th 2018 Lab Tours and Free Discussions

Sep 9th 2018 Departure