1. Xianglong Nie, Dayan Ma*（通讯作者）,  Kewei Xu, Growth mode evolution of hafnium oxide by atomic layer deposition, J. Vac. Sci. Technol. A,32 (2014):1

2. Hongbo Wang，Fei Ma，Qianqian Li，CeZhou Dong，Dayan Ma* (通讯作者)，Hongtao Wang and Kewei Xu，Synthesis and stress relaxation of ZnO/Al-doped ZnO core-shell nanowires, Nanoscale, 5 (2013): 7

3. Tingwei Hu, Fei Ma, Dayan Ma, Dong Yang, Xiangtai Liu,Kewei Xu and Paul K.Chu,Evidence of atomically resolved 6×6 buffer layer with long—range order andshortrange disorder during  formation of graphene on 6H-SiC by thermal decomposition, Appl. Phys. Lett., 102 (2013): 171910

4. Tingwei Hu, Fei Ma, Dayan Ma, Kewei Xu and Paul K. Chu, Direct and diffuse reflection of electron waves at armchair edges of epitaxial graphene, RSC Adv., 48(2013):3

5.Tingwei Hu, Dayan Ma, Fei Ma and Keveei Xu, Preferred armchair edges of epitaxial graphene on 6H-SiC(0001) by thermal decomposition, Appl. Phys. Lett., 101(2012): 241903

6. Hongbo Wang, Dayan Ma*(通讯作者), Fei Ma and Kewei Xu, Impact of ultrathin Al2O3 interlayer on thermal stability and leakage current properties of TiO2/A12O3 stacking dielectrics,  J. Vac. Sci. Technol. B, 30 (2012): 040601

7. Yuniin Sun, Fei Ma, Dayan Ma, Kewei Xu and  Paul. K. Chu, Stress-induced annihilation of Stone-Wales defects in graphene nanoribbons, J. Phys. D: Appl. Phys., 45 (2012): 305303

8. Tianwei Zhang, Fei Ma, Weilin Zhang, Dayan Ma, Kewei Xu and Paul K Chu, Difmsion-controlled formation mechanism of dual—phase structure during Alinduced crystallization of SiGe, Appl. Phys. Lett,. 100 (2012): 071908

9. Gengrong Chang, Fei Ma, Dayan Ma, Kewei Xu, Fabrication and Characterization  of Silicon Quantum Dots in Si-Rich Silicon Carbide Films, J. Nanosci, & Nanotech., 11 (2011): 10824

10. Fei Ma, Yunjin Sun, Dayan Ma, Kewei Xu and Paul K Chu, Reversible phase transformation in graphene nano-ribbons: Lattice shearing based mechanism, Acta Mater.,59 (2011): 6783

11. Gengrong Chang, Fei Ma, Dayan Ma, Kewei Xu, Multi-band silicon quantum  dots embedded in an amorphous matrix of silicon carbide, Nanotechnology, 21(2010)：045601

12. Yaoyi Li, Miao Liu, Dayan Ma, Qikun Xue, Kewei Xu, Bistability of Nanoscale Ag islands on a Si(111)-(4×1)-In surface induced by anisotropic stress, Phys. Rev. Lett., 103 (2009): 076102