1. Artificial nanostructures created by Atom/molecule manipulation with STM

2. Low dimensional quantum materials, including quantum dots, oxide thin films, 2D atomic crystals and magnetic ultra-thin films (non-collinear system)

3. Surface adsorption and reactions. Interaction of molecules with metal, semiconductor and oxide surfaces.

2017.9 – Present   Xi'an Jiaotong University, China   Professor

2014.1 – 2017.7   Paul Drude Institute, Germany     Scientist  

2011.6 – 2013.12  Fritz Haber Institute, Germany      Postdoc

2010.3 – 2011.6   Fritz Haber Institute, Germany    Visiting Student

2005.9 – 2011.6   Institute of Physics, Chinese Academy of Sciences, China   Ph.D.

2001.9 – 2005.7   College of Physics, Nankai University, Tianjin, China      B.Sc.

2011  Max Planck Society Postdoctoral Fellowship, Fritz Haber Institute

2008  Director’s scholarship, Institute of Physics, Chinese Academy of Sciences

2007  Award for Outstanding Graduate Student, Chinese Vacuum Society

2005  Honor for Excellent Thesis, Nankai University

http://scholar.google.com/citations?user=mfz15VwAAAAJ&hl=en

http://www.researcherid.com/rid/D-5461-2011

Selected Publications

(1) P. G. Lustemberg#, Y. Pan#, D.C. Grinter, B.-J. Shaw, C.L. Pang, G. Thornton, R. Pérez, M. V. Ganduglia-Pirovano*, N. Nilius*. Diffusion barriers block defect occupation on reduced CeO2(111) Phys. Rev. Lett. 116, 236101, (2016).  (#contributed equally)

(2) Y. Pan, J. Yang, S. C. Erwin, K. Kanisawa, S. Fölsch*. Reconfigurable Quantum-Dot Molecules Created by Atom Manipulation, Phys. Rev. Lett. 115 , 076803, (2015)

(3) Y. Pan, N. Nilius*, H. J. Freund, J. Paier*, C. Penschke, J. Sauer. Titration of Ce 3+ ions in the CeO2 (111) surface by Au adatoms, Phys. Rev. Lett. 111, 206101, (2013)

(4) Y. Pan, L. Z. Zhang, H.-J. Freund, H. J. Gao* et al.  Construction of 2D Atomic Crystals on Transition Metal Surfaces. Small 10, 2215-2225 (2014).

(5) Y. Pan, H. G. Zhang, D. X. Shi, J. T. Sun, S. X. Du, F. Liu, and H.-J. Gao*. Highly ordered, continuous, single-crystalline graphene monolayer formed on Ru (0001), Adv. Mater. 21, 2777, (2009)

Book Chapters

潘毅、杜世萱、黄立、王业亮、高鸿钧；石墨烯材料；《半导体科学与技术》第二版；何杰、夏建白主编，科学出版社 (2016)。

Patent in China:  A method for preparing large scale mono-layer and double-layer single crystalline graphene. Chinese Patent, No. CN 101451269 B,  2011

Patent in US:  A METHOD FOR PREPARING SILICON INTERCALATED MONOLAYER GRAPHENE   Pub. No.: US 2011/0086756 A1,  2011