Phase-change materials and devices for memory and brain-like computing

2021.09 – present: Distinguished Researcher at Xi’an Jiaotong University, Xi’an, China

2020.09 – 2021.08: Humboldt Scholar at RWTH Aachen University, Aachen, Germany

2019.12 – 2021.08: Research fellow at RWTH Aachen University, Aachen, Germany

2014.09 – 2019.03: PhD student at Xi’an Jiaotong University, Xi’an, China

2017.01 – 2018.01: Visiting PhD student at Research Center Jülich, Jülich, Germany

2020 Humboldt Scholar, Alexander von Humboldt-Stiftung/Foundation

2018 Best Poster Award, The European Phase-Change and Ovonic Symposium (E\PCOS)

2018 Best Poster Award, The International Emergent Memory Symposium

2018 Best Poster Award, The 11th International Workshop on Materials Behavior at Micro and Nano-Scale

Full publications list and Citation

http://www.researcherid.com/AAD-2136-2021

Selected Publications

1. K. Ding^#, J.-J. Wang^# (equal contribution), Y. Zhou^#, H. Tian^#, L. Lu, R. Mazzarello, C.-L. Jia, W. Zhang*, F. Rao*, E. Ma*. Phase-change heterostructure enables ultralow noise and drift for memory operation, Science, 366, 210-215 (2019).

2. X. Wang, J. Tan, C. Han, J.-J. Wang* (corresponding author), L. Lu, H. Du, C.-L. Jia, V.L. Deringer*, J. Zhou, W. Zhang*. Sub-Angstrom Characterization of the Structural Origin for High In-Plane Anisotropy in 2D GeS2, ACS Nano, 14, 4, 4456–4462 (2020).

3. J.-J. Wang^#, C. Zhou^#, Y. Yu^#, Y. Zhou, L. Lu, B. Ge, Y. Cheng, C.-L. Jia, R. Mazzarello, Z. Shi*, M. Wuttig*, W. Zhang*. Enhancing thermoelectric performance of Sb2Te3 through swapped bilayer defects, Nano Energy, 79 105484 (2021).

4. J.-J. Wang^#, J. Wang^#, H. Du, L. Lu, P. C. Schmitz, J. Reindl, A. M. Mio, C.-L. Jia, E. Ma, R. Mazzarello, M. Wuttig, W. Zhang*. Genesis and effects of swapping bi-layers in hexagonal GeSb2Te4, Chemistry of Materials, 30, 4770-4777 (2018).

5. Z. Yang^#, B. Li^#, J.-J. Wang^# (equal contribution), X.-D. Wang, M. Xu, H. Tong, X. Cheng, L. Lu, C.-L. Jia, M. Xu,* X. Miao,* W. Zhang,* E. Ma*. Designing conductive-bridge phase-change memory to enable ultralow programming power, Advanced Science, 9, 2103478 (2022).

6. T. Jiang, X. Wang, J.-J. Wang* (corresponding author), Y. Zhou, D. Zhang, L. Lu, C.-L. Jia, M. Wuttig, R. Mazzarello, W. Zhang*. In situ study of vacancy disordering in crystalline phase-change materials under electron beam irradiation, Acta Materialia, 187, 103-111 (2020).

7. J.-J. Wang^#, H.-M. Zhang^#, X.-D. Wang, L. Lu, Wei Zhang*, Riccardo Mazzarello*, In-plane twinning defects in hexagonal GeSb₂Te₄, Advanced Materials Technologies, 7, 2200214 (2022).

8. D. An^#, J.-J. Wang ^# (equal contribution), J. Zhang, X. Zhai, Z. Kang, W. Fan, J. Yan, Y. Liu, L. Lu, C.-L. Jia, M. Wuttig, O. Cojocaru-Mirédin, S. Chen*, W. Wang*, G. J. Snyder, Y. Yu*. Energy & environmental science, 14, 5469-5479.

9. J.-J. Wang, I. Ronneberger, L. Zhou, L. Lu, V.L. Deringer, B. Zhang, L. Tian, H. Du, C. Jia, X. Qian, M. Wuttig, R. Mazzarello, W. Zhang*. Unconventional two-dimensional germanium dichalcogenides, Nanoscale, 10, 7363-7368 (2018).

10. J.-J. Wang, J. Wang, Y. Xu, T. Xin, Z. Song, M. Pohlmann, M. Kaminski, L. Lu, H. Du, C.-L. Jia, R. Mazzarello, M. Wuttig, W. Zhang*. Layer‐Switching Mechanisms in Sb2Te3. Physica Status Solidi RRL, 13, 1900320 (2019).

1. W. Zhang, C. Han, J.-J. Wang, X. Wang, J. Tan (2022): A phase change method for GeS₂ and its application in phase change memory. China Patent (ZL202010065707.6).

2. W. Zhang, J.-J. Wang, Y. Zhou, T. Jiang (2021): A method for high throughput pre-screening of phase change heterojunction materials. China Patent (ZL201910773306.3).

3. W. Zhang, J.-J. Wang, L. Tian (2020): A method of electron beam irradiation induced crystallization of GeSbTe. China Patent (ZL201810369029.5).

4. W. Zhang, J.-J. Wang (2019): A preparation method of hexagonal phase GeTe2 under micro scale. China Patent (ZL201810369025.7).

5. K. Zheng, J.-J. Wang, P. Gao, X. Han (2015): Preparation of carbon nanotubes by electron beam irradiation induced deposition. China Patent (ZL201310657117.2).

6. X. Han, R. Shao, K. Zheng, T. Zhang, J.-J. Wang, Z. Zhang (2016): A transmission electron microscope thin-film window for in situ high-resolution observation of electrogenic phase change processes in phase change materials. China Patent (ZL201410140893.X).